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WTC2306 Enhancement Mode Power MOSFET

WTC2306 Description

WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE .

WTC2306 Features

* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V
* Rugged and Reliable
* Simple Drive Requirement

WTC2306 Applications

* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junctio

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Datasheet Details

Part number
WTC2306
Manufacturer
Weitron Technology
File Size
779.58 KB
Datasheet
WTC2306_WeitronTechnology.pdf
Description
Enhancement Mode Power MOSFET

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Enhancement Mode Power MOSFET Weitron Technology
Weitron Technology WTC2306-like datasheet