Datasheet4U Logo Datasheet4U.com

WTC2305 - Enhancement Mode Power MOSFET

WTC2305 Description

WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE .

WTC2305 Features

* Super High Dense Cell Design For Low R DS(ON) R DS(ON)

WTC2305 Applications

* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -4.2 -30 1.4 1

📥 Download Datasheet

Preview of WTC2305 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
WTC2305
Manufacturer
Weitron Technology
File Size
2.25 MB
Datasheet
WTC2305_WeitronTechnology.pdf
Description
Enhancement Mode Power MOSFET

📁 Related Datasheet

  • WTC02SK - 2-channel capacitive inductive touch button chip (WINCOM)
  • WTC02SP - 2-Channel Capacitive-Sensing Touch Button Chip (WINCOM)
  • WTC1006BSI - 6-channel capacitive touch-sensitive button chip (WINCOM)
  • WTC1008BSI - 8-channel capacitive inductive touch button chip (WINCOM)
  • WTC401SPI - 4 keys + 1 roller slider capacitive touch sensing chip (WINCOM)
  • WTC6104BSI - 4-channel capacitive inductive touch button chip (ETC)
  • WTC6104BSI-L - 4-channel capacitive inductive touch button chip (ETC)
  • WTC6104DNI - 4-channel capacitive inductive touch button chip (WINCOM)

📌 All Tags

Enhancement Mode Power MOSFET Weitron Technology
Weitron Technology WTC2305-like datasheet