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WSF128K32-xH2x - 128K x 32 SRAM/FLASH MODULE

Description

D0-31 A0-16 SWE 1-4 SCS OE VCC GND NC FWE1-4 FCS Data Inputs/Outputs Address Inputs SRAM Write Enables SRAM Chip Select Output Enable Power Supply Ground Not Connected Flash Write Enables Flash Chip Select BLOCK DIAGRAM FWE2 SWE2 FWE3 SWE3 FWE4 SWE4 128K x 8 Flash 128K x 8 SRAM 128K x 8 Flash 128

Features

  • Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH).
  • Packaging: • 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402).
  • 128Kx32 SRAM.
  • 128Kx32 5V Flash.
  • Organized as 128Kx32 of SRAM and 128Kx32 of Flash Memory with common Data Bus.
  • Low Power CMOS.
  • Commercial, Industrial and Military Temperature Ranges.
  • TTL Compatible Inputs and Outputs.
  • Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation.
  • Weight -.

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Datasheet Details

Part number WSF128K32-xH2x
Manufacturer White Electronic
File Size 246.86 KB
Description 128K x 32 SRAM/FLASH MODULE
Datasheet download datasheet WSF128K32-xH2x Datasheet
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www.DataSheet4U.com White Electronic Designs 128KX32 SRAM/FLASH MODULE FEATURES ■ Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH) ■ Packaging: • 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402) ■ 128Kx32 SRAM ■ 128Kx32 5V Flash ■ Organized as 128Kx32 of SRAM and 128Kx32 of Flash Memory with common Data Bus ■ Low Power CMOS ■ Commercial, Industrial and Military Temperature Ranges ■ TTL Compatible Inputs and Outputs ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Weight - 13 grams typical PRELIMINARY* WSF128K32-XH2X FLASH MEMORY FEATURES ■ 10,000 Erase/Program Cycles ■ Sector Architecture • 8 equal size sectors of 16K bytes each • Any combination of sectors can be concurrently erased.
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