WPM9435 Datasheet, Mosfet, WillSEMI

WPM9435 Features

• Mosfet z z z z z -30V/-5A,RDS(ON)= 36mŸ@VGS=- 10V -30V/-4A,RDS(ON)= 53mŸ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ca

PDF File Details

Part number:

WPM9435

Manufacturer:

WillSEMI

File Size:

154.71kb

Download:

📄 Datasheet

Description:

P-channel mosfet. The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

WPM9435 Application

• Applications OR USES AS CRITICAL PD COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

TAGS

WPM9435

WillSEMI

📁 Related Datasheet

WPM9435A - MOSFET (WillSEMI)
WPM9435A Single P-Channel, -30V, -6.3A, Power MOSFET WPM9435A Http://.sh-willsemi. VDS (V) -30 Typical RDS(on) (mΩ) 33 @ VGS=-10V 43 @ VGS=-4.

WPM04-2045A - 4Watts POWER AMPLIFIER (WanTcom)
WPM04-2045A 400- 465 MHz 4 Watts POWER AMPLIFIER REV B December, 2020 Key Features Product Description Applications  400 ~ 465 MHz  5.0 dB Nois.

WPM1480 - P-Channel MOSFET (Will Semiconductor)
WPM1480 WPM1480 Single P-Channel, -20 V, -1.5 A,Power Mosfet Description The WPM1480 uses advanced trench technology and design to provide excellent .

WPM1481 - Single P-Channel Power MOSFET (WillSEMI)
WPM1481 Single P-Channel, -12V, -5.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.022@ VGS=-4.5V 0.030@ VGS=-2.5V 0.045@ VGS=-1.8V ID (A) -5.5.

WPM1483 - P-Channel MOSFET (Will Semiconductor)
WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V Description.

WPM1485 - P-Channel MOSFET (Will Semiconductor)
WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET VDS (V) -12 Rds(on) (Ω) 0.015@ VGS=–4.5V 0.020@ VGS=–2.5V 0.030@ VGS=–1.8V Descriptions The WP.

WPM1488 - P-Channel MOSFET (Will Semiconductor)
WPM1488 Single P-Channel, -12V, -1.4A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.080@ VGS=–4.5V 0.086@ VGS=–3.6V 0.105@ VGS=–2.5V ID (A) -1.2 .

WPM2005 - Power MOSFET and Schottky Diode (WillSEMI)
WPM2005 WPM2005 Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circu.

WPM2005B - Power MOSFET and Schottky Diode (WillSEMI)
WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design.

WPM2006 - Power MOSFET and Schottky Diode (WillSEMI)
WPM2006 Power MOSFET and Schottky Diode WPM2006 Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circu.