* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small package DFN2
* 2-6L WPM1481 Http://www.sh-willsemi.com DFN2
* 2-6L DDS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54 WLS
WPM1481
WillSEMI
0.99 MB
Single p-channel power mosfet.
WPM1481
Single P-Channel, -12V, -5.5A, Power MOSFET
VDS (V) -12
Typical Rds(on) (Ω) 0.022@ VGS=-4.5V 0.030@ VGS=-2.5V 0.045@ VGS=-1.8V
ID (A) -5.5.
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