PFF7N80
Wing On
1.32MB
N-channel mosfet.
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PFF7N80E - N-Channel MOSFET
(Wing On)
PFP7N80E / PFF7N80E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
PFF7N60 - N-channel MOSFET
(PowerGate)
PFP7N60/PFF7N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.2 Ω)@VGS=10V ■ Gate Charge (Typ. 35nC) ■ Improved dv/dt Capability ■ 10.
PFF7N60E - N-Channel MOSFET
(Wing On)
PFP7N60E / PFF7N60E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
PFF7N65E - N-Channel MOSFET
(Wing On)
PFP7N65E / PFF7N65E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
PFF70R590 - N-Channel Super Junction MOSFET
(Wing On)
PFP70R590 / PFF70R590
PFP70R590 / PFF70R590
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low cond.
PFF70R900 - N-Channel Super Junction MOSFET
(Wing On)
PFP70R900 / PFF70R900
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge c.
PFF730E - N-Channel MOSFET
(Wing On)
PFP730E / PFF730E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkabl.
PFF10N40 - N-Channel MOSFET
(Wing On)
Sep 2008
PFP10N40 / PFF10N40
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances.
PFF10N60 - N-Channel MOSFET
(Wing On)
Nov 2011
PFP10N60 / PFF10N60
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances.
PFF10N65 - N-Channel MOSFET
(Wing On)
PFP10N65 / PFF10N65
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.