PFF70R590 Datasheet, Mosfet, Wing On

PFF70R590 Features

• Mosfet  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 700

PDF File Details

Part number:

PFF70R590

Manufacturer:

Wing On

File Size:

905.84kb

Download:

📄 Datasheet

Description:

N-channel super junction mosfet.

TAGS

PFF70R590

Wing On

📁 Related Datasheet

PFF70R900 - N-Channel Super Junction MOSFET (Wing On)
PFP70R900 / PFF70R900 FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge c.

PFF730E - N-Channel MOSFET (Wing On)
PFP730E / PFF730E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl.

PFF7N60 - N-channel MOSFET (PowerGate)
PFP7N60/PFF7N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.2 Ω)@VGS=10V ■ Gate Charge (Typ. 35nC) ■ Improved dv/dt Capability ■ 10.

PFF7N60E - N-Channel MOSFET (Wing On)
PFP7N60E / PFF7N60E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF7N65E - N-Channel MOSFET (Wing On)
PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF7N80 - N-Channel MOSFET (Wing On)
June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFF7N80E - N-Channel MOSFET (Wing On)
PFP7N80E / PFF7N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF10N40 - N-Channel MOSFET (Wing On)
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF10N60 - N-Channel MOSFET (Wing On)
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF10N65 - N-Channel MOSFET (Wing On)
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.