PFM1N60 - N-Channel MOSFET
PFM1N60 Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 8.3 Ω (Typ.) @VGS=10V APPLICATION Low power battery charge
