SFTN0865 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage Drain Current 1) Drain Current - Pulsed 1) VGS ± 30 V TC = 25℃ TC = 100℃ ID 8 5 A IDM 18 A Power Dissipation Ptot 40.3 W Operating Junction Temperature Tj 150 ℃ Storage Temperature Range 1) Drain current limited by maximum junction temperature.
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