SFTN1180 Datasheet - Winning Team

SFTN1180 N-Channel MOSFET

SFTN1180 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage VDS 800 V VGS ± 20 V Gate-Source Voltage AC(f > 1 Hz) VGS ± 30 V Drain Current Peak Drain Current TC = 25℃ TC = 100℃ ID 11 7.1 A IDM 33 A Power Dissipation TC = 25℃ Ptot 41 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 ℃ Thermal.

SFTN1180-WinningTeam.pdf