SFTN1165R Datasheet - Winning Team

SFTN1165R N-Channel MOSFET

SFTN1165R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Symbol Value Unit VDS 650 V VGS ± 30 V TC = 25℃ ID 11 A TC = 100℃ ID 6.9 A IDM 28 A TC = 25℃ PD 83.3 W Tj 150 ℃ Tstg - 55 to + 150 ℃ Thermal Characteristics P.

SFTN1165R-WinningTeam.pdf