SFTN1850 Datasheet - Winning Team

SFTN1850 N-Channel MOSFET

SFTN1850 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Drain-Source Voltage Gate-Source Voltage Drain Current 1) TC = 25℃ Peak Drain Current 1) 2) Avalanche energy,single pulse 3) TC = 100℃ Power Dissipation TC = 25℃ Maximum Thermal Resistance from Juntion to Case2) Maximum Thermal Resistance from Juntion to Ambient 2) VDS VGS ID IDM EAS Ptot RθJC RθJA 500 ± 30 18 11 72 950 .

SFTN1850-WinningTeam.pdf