SFTN2906 Datasheet - Winning Team

SFTN2906 N-Channel MOSFET

SFTN2906 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage Drain Current at VGS = 10 V VGS ± 20 V TC = 25℃ TC = 100℃ ID 84 59 A Peak Drain Current TC = 25℃ IDM 336 A Power Dissipation TC = 25℃ Ptot 38 W Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω EAS 140 mJ Operating Junction and Storage Tempera.

SFTN2906-WinningTeam.pdf