WFF830 Datasheet - Wisdom technologies

WFF830 - N-Channel MOSFET

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switc.

WFF830 Features

* RDS(on) (Max 1.4 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 25nC)

* Improved dv/dt Capability, High Ruggedness

* 100% Avalanche Tested www.DataSheet4U.com

* Maximum Junction Temperature Range (150°C)

* 1. Gate { ▲

* { 3. Source General Descr

WFF830_Wisdomtechnologies.pdf