WFF840B
Winsemi
471.81kb
Silicon n-channel mosfet. This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially des
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Features
■ ■
RDS(on) (Max 0.85 Ω )@VGS=10V
Symbol
◀
{
2. Drain
Gate Charge (Typical 38nC) ■ Improv.
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■ ■
RDS(on) (Max 1.4 Ω )@VGS=10V
Symbol
◀
{
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(WINSEMI SEMICONDUCTOR)
.DataSheet.in
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� � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Sw.
WFF8N60B - Silicon N-Channel MOSFET
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WFF8N60B Product Description
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WFF8N60C Product Description
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� 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Vol.
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WFF - Fast Fusible Metal Film Resistors
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• • •
Low power fusing Predictable fusing characteristics Flameproof protection
.