C4D30120H - 30A Silicon Carbide Schottky Diode
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various applica
C4D30120H Features
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage
* Temperature-Independent Switching Behavior Typical Applications
* Industrial Switched Mode Power Supplies
* Uninterruptible & AU
