C4D10120H Datasheet - Wolfspeed

C4D10120H 10A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various applica.

C4D10120H Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient

* Zero Reverse Recovery Current / Forward Recovery Voltage

* Temperature-Independent Switching Behavior Typical Applications

* Industrial Switched Mode Power Supplies

* Uninterruptible & AU

C4D10120H-Wolfspeed.pdf