Part number: C4D15120A
Manufacturer: Cree
File Size: 391.95KB
Download: 📄 Datasheet
Description: Silicon Carbide Schottky Diode
VRRM =
1200 V
IF TC<135˚C = 20 A Qc = 96 nC
Package
*
*
*
*
*
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency.
*
*
*
Switch Mode Power Supplies Power Factor Correction Motor Drives
Part Number
C4D15120A
Packa.
Image gallery
TAGS
📁 Related Datasheet
C4D15120A - 15A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D15120A
4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottk.
C4D15120D - Silicon Carbide Schottky Diode
(CREE)
C4D15120D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency .
C4D15120D - 15A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D15120D
4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky .
C4D15120H - Silicon Carbide Schottky Diode
(CREE)
C4D15120H
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency .
C4D15120H - 15A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D15120H
4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky B.
C4D10120A - Silicon Carbide Schottky Diode
(Cree)
C4D10120A
Silicon Carbide Schottky Diode
VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC
Z-Rec™ Rectifier
Features Package
• • .
C4D10120A - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D10120A
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottk.
C4D10120D - Silicon Carbide Schottky Diode
(Cree)
C4D10120D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM = 1200 V
IF (TC=135˚C) = 18 A**
Qc
.
C4D10120D - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D10120D
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky .
C4D10120E - Silicon Carbide Schottky Diode
(Cree)
C4D10120E
Silicon Carbide Schottky Diode
VRRM
=
1200 V
Z-Rec™ Rectifier
Features Package
IF (TC=135˚C) = 16 A Qc = 52 nC
• • • •.