C4D15120A Datasheet, diode equivalent, Cree

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Part number: C4D15120A

Manufacturer: Cree

File Size: 391.95KB

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Description: Silicon Carbide Schottky Diode

C4D15120A Features and benefits

C4D15120A Application

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C4D15120A - 15A Silicon Carbide Schottky Diode (Wolfspeed)
C4D15120A 4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottk.

C4D15120D - Silicon Carbide Schottky Diode (CREE)
C4D15120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency .

C4D15120D - 15A Silicon Carbide Schottky Diode (Wolfspeed)
C4D15120D 4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky .

C4D15120H - Silicon Carbide Schottky Diode (CREE)
C4D15120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency .

C4D15120H - 15A Silicon Carbide Schottky Diode (Wolfspeed)
C4D15120H 4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B.

C4D10120A - Silicon Carbide Schottky Diode (Cree)
C4D10120A Silicon Carbide Schottky Diode VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC Z-Rec™ Rectifier Features Package • • .

C4D10120A - 10A Silicon Carbide Schottky Diode (Wolfspeed)
C4D10120A 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottk.

C4D10120D - Silicon Carbide Schottky Diode (Cree)
C4D10120D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM  =  1200 V IF (TC=135˚C) = 18 A** Qc .

C4D10120D - 10A Silicon Carbide Schottky Diode (Wolfspeed)
C4D10120D 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky .

C4D10120E - Silicon Carbide Schottky Diode (Cree)
C4D10120E Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 16 A Qc = 52 nC • • • •.