Part number:
C4D02120E
Manufacturer:
Cree
File Size:
801.88 KB
Description:
Silicon carbide schottky diode.
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
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Wolfspeed | C4D02120E-TR | DIODE SIL CARB 1200V 10A TO2522 | DigiKey | 0 | 1000 units |
$0.94
|
🛒 Buy Now |
C4D02120E Datasheet (801.88 KB)
C4D02120E
Cree
801.88 KB
Silicon carbide schottky diode.
* 1.2kV Schottky Rectifier
* Zero Reverse Recovery Current
* High-Frequency Operation
* Temperature-Independent Switching
* Extremely Fast Switching
* Positive Temperature Coefficient on VF Benefits
* Replace Bipolar with Unipolar Rectif
📁 Related Datasheet
C4D02120A - Silicon Carbide Schottky Diode
(Cree)
C4D02120A
®
Silicon Carbide Schottky Diode
VRRM = 1200 V IF (TC=135˚C) = 6 A Qc = 12 nC
Z-Rec Rectifier
Features Package
• • .
C4D02120A - 2A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D02120A
4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky.
C4D02120E - 2A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D02120E
1200 V, 2 A Silicon Carbide Schottky Diode
Features
• 1.2 kV Schottky rectifier • Zero reverse recovery current • High-frequency operation .
C4D05120A - 5A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D05120A
4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Ba.
C4D05120A - Silicon Carbide Schottky Diode
(Cree)
C4D05120A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM
= 1200 V
IF (TC=135˚C) =
9.5 A
Qc = 27 nC
• 1.2kV S.
C4D05120E - Silicon Carbide Schottky Diode
(Cree)
C4D05120E
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 9 A 27 nC
Z-Rec Rectifier
Features Package
•.
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