C4D10120D
Cree
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Silicon carbide schottky diode.
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C4D10120A - Silicon Carbide Schottky Diode
(Cree)
C4D10120A
Silicon Carbide Schottky Diode
VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC
Z-Rec™ Rectifier
Features Package
• • .
C4D10120A - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D10120A
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottk.
C4D10120D - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D10120D
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky .
C4D10120E - Silicon Carbide Schottky Diode
(Cree)
C4D10120E
Silicon Carbide Schottky Diode
VRRM
=
1200 V
Z-Rec™ Rectifier
Features Package
IF (TC=135˚C) = 16 A Qc = 52 nC
• • • •.
C4D10120E - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D10120E
1200 V, 10 A Silicon Carbide Schottky Diode
Features
• 1.2 kv Schottky rectifier • Zero reverse recovery current • High-frequency operatio.
C4D10120H - Silicon Carbide Schottky Diode
(CREE)
C4D10120H
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency .
C4D10120H - 10A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D10120H
4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky B.
C4D15120A - Silicon Carbide Schottky Diode
(Cree)
C4D15120A–Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
VRRM =
1200 V
IF TC<135˚C = 20 A Qc = 96 nC
Package
• • • • •
1.
C4D15120A - 15A Silicon Carbide Schottky Diode
(Wolfspeed)
C4D15120A
4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottk.
C4D15120D - Silicon Carbide Schottky Diode
(CREE)
C4D15120D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency .