C4D10120D Datasheet - Cree

C4D10120D Silicon Carbide Schottky Diode

C4D10120D Features

* Package VRRM = 1200 V IF (TC=135˚C) = 18 A

* Qc = 54 nC

* 1.2kV Schottky Rectifier

* Zero Reverse Recovery Current

* High-Frequency Operation

* Temperature-Independent Switching

* Extremely Fast Switc

Datasheet Details

C4D10120D

Cree

836.22 KB

Silicon carbide schottky diode.

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C4D10120D C4D10120D Silicon Carbide Schottky Diode Cree

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