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CAB320M17XM3 - Half-Bridge Module

Key Features

  • High Power Density Footprint.
  • High Junction Temperature (175 °C) Operation.
  • Low-Inductance (6.7 nH) Design.
  • Implements Wolfspeed’s Third Generation SiC MOSFET Technology.
  • Silicon Nitride Insulator and Copper Baseplate.
  • 1700 V Drain-Source Voltage C.
  • Cross-pin Gate-Source Signal Pinout 4 VDS 3 1700 V 2 1 IDS 320 A V+ V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAB320M17XM3 5 1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1700 V Drain-Source Voltage C • Cross-pin Gate-Source Signal Pinout 4 VDS 3 1700 V 2 1 IDS 320 A V+ V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Typical Applications • Energy • Medical • Motor & Motion Control • Test and Production Equipment • Transportation • Traction Inverters System Benefits 3 8,9 • Terminal layout allows for direct bus bar connection without bends • or bushings eB nabling a simple, low-inducta45nce design.