CAB320M17XM3 - Half-Bridge Module

Features

High Power Density Footprint.
High Junction Temperature (175 °C) Operation.
Low-Inductance (6.7 nH) Design.
Implements Wolfspeed’s Third Generation SiC MOSFET Technology.
Silicon Nitride Insulator and Copper Baseplate.
1700 V Drain-Source Voltage C.
Cross-pin Gate-Source Signal Pinout 4 VDS 3 1700 V 2 1 IDS 320 A V+ V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Typical.

Wolfspeed

Datasheet Details

Part number	CAB320M17XM3
Manufacturer	Wolfspeed
File Size	3.02 MB
Description	Half-Bridge Module
Datasheet	CAB320M17XM3 Datasheet
Additional preview pages of the CAB320M17XM3 datasheet.

📁 Similar Datasheet

CAB450M12XM3 - Half-Bridge Module (CREE)
CAB4A - 32-Bit 1:2 Command/Address/Control Buffer and 1:4 Differential Clock Buffer (Texas Instruments)

Other Datasheets by Wolfspeed

CAB003M09DM3 - Half-Bridge Module
CAB004M12GM4 - Half-Bridge Module
CAB004M12GM4T - Half-Bridge Module
CAB006A12GM3 - Silicon Carbide Half-Bridge Module
CAB006A12GM3T - Silicon Carbide Half-Bridge Module
CAB006M12GM3 - Half-Bridge Module
CAB006M12GM3T - Half-Bridge Module
CAB008A12GM3 - Half-Bridge Module

Full PDF Text Transcription

Click to expand full text

CAB320M17XM3 5 1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low-Inductance (6.7 nH) Design • Implements Wolfspeed’s Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate • 1700 V Drain-Source Voltage C • Cross-pin Gate-Source Signal Pinout 4 VDS 3 1700 V 2 1 IDS 320 A V+ V+ G1 K1 Mid NTC1 G2 K2 -t° NTC2 V- Typical Applications • Energy • Medical • Motor & Motion Control • Test and Production Equipment • Transportation • Traction Inverters System Benefits 3 8,9 • Terminal layout allows for direct bus bar connection without bends • or bushings eB nabling a simple, low-inducta45nce design.

Published: Jun 25, 2023 |