CMPA801B030D Datasheet - Wolfspeed

CMPA801B030D - Power Amplifier

Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher t.

CMPA801B030D Features

* 28 dB Small Signal Gain

* 40 W Typical PSAT Operation up to 28 V

* High Breakdown Voltage

* High Temperature Operation

* Size 0.142 x 0.188 x 0.004 inches Applications

* Point to Point Radio

* Communications

* Test In

CMPA801B030D-Wolfspeed.pdf