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CMPA0527005F GaN HEMT

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Description

CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolith.

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Datasheet Specifications

Part number
CMPA0527005F
Manufacturer
CREE
File Size
1.08 MB
Datasheet
CMPA0527005F-CREE.pdf
Description
GaN HEMT

Features

* Up to 2.7 GHz Operation
* 8 W Typical Output Power
* 20 dB Small Signal Gain

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