CMPA0527005F Datasheet - CREE

CMPA0527005F GaN HEMT

CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz. The transistor is available in a 6 leaded flange package. PackPaNg:eCTMyPpAes0:52474000252F1 Typical Performance Over 0.5 - 2.7 GHz.

CMPA0527005F Features

* Up to 2.7 GHz Operation

* 8 W Typical Output Power

* 20 dB Small Signal Gain

* Application Circuit for 0.5 - 2.7 GHz

* 50% Efficiency

* 50 V Operation Rev 1.2 - March 2020 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum

CMPA0527005F Datasheet (1.08 MB)