* Up to 2.7 GHz Operation
* 8 W Typical Output Power
* 20 dB Small Signal Gain
* Application Circuit for 0.5 - 2.7 GHz
* 50% Efficiency
* 50 V Operation Rev 1.2 - March 2020 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum
CMPA0527005F Datasheet (1.08 MB)
CMPA0527005F
CREE
1.08 MB
Gan hemt.
CMPA0527005F
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolith.
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