CMPA0527005F - GaN HEMT

CREE

CMPA0527005F Description

CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolith.

CMPA0527005F Features

* Up to 2.7 GHz Operation
* 8 W Typical Output Power
* 20 dB Small Signal Gain

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Datasheet Details

Part number: CMPA0527005F
Manufacturer: CREE
File Size: 1.08 MB
Datasheet: CMPA0527005F-CREE.pdf
Description: GaN HEMT

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📌 All Tags

GaN HEMT CREE

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