CMPA0527005F Datasheet - CREE

CMPA0527005F, GaN HEMT

CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolith.

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CMPA0527005F-CREE.pdf

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Datasheet Details

Part number:

CMPA0527005F

Manufacturer:

CREE

File Size:

1.08 MB

Description:

GaN HEMT

Features

* Up to 2.7 GHz Operation
* 8 W Typical Output Power
* 20 dB Small Signal Gain

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CMPA0527005F GaN HEMT CREE

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