CMPA1C1D060D Datasheet - MACOM

CMPA1C1D060D - Power Amplifier

The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-o.

CMPA1C1D060D Features

* 26 dB Small Signal Gain

* 60 W Typical PSAT

* Operation up to 40 V

* High Breakdown Voltage

* High Temperature Operation

* Size 0.209 x 0.240 x 0.004 inches Applications

* Satellite Communications Uplink

* PTP Radio 1 MACOM Technolo

CMPA1C1D060D-MACOM.pdf