CMPA1D1E080F Datasheet - CREE

CMPA1D1E080F - Power Amplifier

CMPA1D1E080F 80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC). It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F ideal for 13.75 - 14.5 GHz commercial Ku Band satellite communications applications. The transistor is supplied in a 14 lead metal/cerami.

CMPA1D1E080F Features

* 28 dB Small Signal Gain

* 80 W CW Power

* 500 MHz Video Bandwidth

* 40 W Linear Power Under OQPSK Applications

* Satellite Communications Uplink Rev 0

* May 2019-PRELIMINARY Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ra

CMPA1D1E080F-CREE.pdf