CMPA0060025F Datasheet - CREE

CMPA0060025F GaN MMIC Power Amplifier

CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables.

CMPA0060025F Features

* 17 dB Small Signal Gain

* 25 W Typical PSAT

* Operation up to 50 V

* High Breakdown Voltage

* High Temperature Operation

* 0.5” x 0.5” total product size Applications

* Ultra Broadband Amplifiers

* Test Instrumentation

CMPA0060025F Datasheet (1.72 MB)

CMPA0060025F Datasheet Preview — Preview of CMPA0060025F PDF

Datasheet Details

Part number:

CMPA0060025F

Manufacturer:

CREE

File Size:

1.72 MB

Description:

Gan mmic power amplifier.

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CMPA0060025F GaN MMIC Power Amplifier CREE

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