CMPA2560025F Datasheet (CREE) - GaN MMIC Power Amplifier

CMPA2560025F, GaN MMIC Power Amplifier

CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.

This MMIC contain

CMPA2560025F Features

* 24 dB Small Signal Gain

* 25 W Typical PSAT

* Operation up to 28 V

* High Breakdown Voltage

* High Temperature Operation Applications

* Ultra Broadband Amplifiers

* Fiber Drivers

* Test Instrumentation

* EMC Amplifie