CMPA2735015D - Power Amplifier
The CMPA2735015D is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher the
CMPA2735015D Features
* 35 dB small signal gain
* 20 W typical PSAT
* Operation up to 50 V
* High breakdown voltage
* High temperature operation
* Size 0.118 x 0.071 x 0.004 inches Applications
* Civil and military pulsed radar amplifiers Typical Performance Over
