CMPA2560025F Datasheet - MACOM

CMPA2560025F GaN MMIC Power Amplifier

The CMPA2560025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher the.

CMPA2560025F Features

* 24 dB small signal gain

* 25 W typical PSAT

* Operation up to 28 V

* High breakdown voltage

* High temperature operation Applications

* Ultra broadband amplifiers

* Fiber drivers

* Test instrumentation

* EMC amplifier drivers

CMPA2560025F-MACOM.pdf

CMPA2560025F Datasheet Preview — Preview of CMPA2560025F PDF

Datasheet Details

Part number:

CMPA2560025F

Manufacturer:

MACOM

File Size:

1.07 MB

Description:

Gan mmic power amplifier.

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CMPA2560025F CMPA2560025F GaN MMIC Power Amplifier MACOM

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