CMPA2560025F - GaN MMIC Power Amplifier
The CMPA2560025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher the
CMPA2560025F Features
* 24 dB small signal gain
* 25 W typical PSAT
* Operation up to 28 V
* High breakdown voltage
* High temperature operation Applications
* Ultra broadband amplifiers
* Fiber drivers
* Test instrumentation
* EMC amplifier drivers
