Part number:
CMPA1D1E025F
Manufacturer:
CREE
File Size:
1.72 MB
Description:
Power amplifier.
Datasheet Details
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.
The Ku Band 25W MMIC is targeted for commercial Ku Band satellite commun
CMPA1D1E025F Features
* 24 dB Small Signal Gain
* 40 W Typical Pulsed PSAT Operation up to 40 V
* 20 W linear power under OQPSK
* Class A/B high gain, high efficiency 50 ohm MMIC Ku Band high power amplifier Applications
* Satellite Communication Uplink Rev 2.1
Datasheet Details
CMPA1D1E025F
CREE
1.72 MB
Power amplifier.
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