CMPA1D1E025F Power Amplifier

CREE

Description

CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier .
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a sili.

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Datasheet Specifications

Part number: CMPA1D1E025F
Manufacturer: CREE
File Size: 1.72 MB
Datasheet: CMPA1D1E025F-CREE.pdf
Description: Power Amplifier

Features

* 24 dB Small Signal Gain
* 40 W Typical Pulsed PSAT Operation up to 40 V
* 20 W linear power under OQPSK

Applications

* It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package. PN: CMPA1D1E025F Package Type:440213 Typical Performance Over 13.7

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CMPA1D1E025F Power Amplifier CREE

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