Datasheet Details
- Part number
- CMPA1D1E025F
- Manufacturer
- CREE
- File Size
- 1.72 MB
- Datasheet
- CMPA1D1E025F-CREE.pdf
- Description
- Power Amplifier
CMPA1D1E025F Description
CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier .
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a sili.
CMPA1D1E025F Features
* 24 dB Small Signal Gain
* 40 W Typical Pulsed PSAT Operation up to 40 V
* 20 W linear power under OQPSK
CMPA1D1E025F Applications
* It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package. PN: CMPA1D1E025F Package Type:440213
Typical Performance Over 13.7
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