CMPA1D1E030D Datasheet - Wolfspeed

CMPA1D1E030D - Power Amplifier

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide .

CMPA1D1E030D Features

* 27 dB Small Signal Gain

* 30 W Typical PSAT

* Operation up to 40 V

* High Breakdown Voltage

* High Temperature Operation Applications

* Satellite Communications Uplink Rev. 2.0, 2022-9-20 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.530

CMPA1D1E030D-Wolfspeed.pdf