CMPA5259025F Datasheet - CREE

CMPA5259025F GaN MMIC

CMPA5259025F 25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PacPkNa:geCMTyPpAe5:245490022159F Typical Performa.

CMPA5259025F Features

* 30 dB Small Signal Gain

* 50% Efficiency at PSAT

* Operation up to 28 V

* High Breakdown Voltage Applications

* Radar Rev 0.1

* January 2019 Subject to ch

CMPA5259025F Datasheet