CMPA5259080S Datasheet - MACOM

CMPA5259080S Power Amplifier

The CMPA5259080S is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher the.

CMPA5259080S Features

* >48% typical power added efficiency

* 29 dB small signal gain

* 110 W typical PSAT

* Operation up to 40 V

* High breakdown voltage

* High temperature operation Applications

* Civil and military pulsed radar amplifiers Note: Features are typ

CMPA5259080S-MACOM.pdf