CMPA5259025F Datasheet - MACOM

CMPA5259025F GaN MMIC

The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applicatio.

CMPA5259025F Features

* 30 dB small signal gain

* 50% efficiency at PSAT Operation up to 28 V

* High breakdown voltage Applications

* Radar Typical Performance Over 5.2 - 5.9 GHz (TC = 25 °C) of Demonstration Amplifier Parameter Small Signal Gain Output Power1 Efficiency1

CMPA5259025F-MACOM.pdf