CMPA5585030F Datasheet - CREE

CMPA5585030F, Power Amplifier

CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) ba.

Applications

* 25 dB Small Signal Gain
* 30 W Typical PSAT
* Operation up to 28 V
* High Breakdown Voltage
* High Temperature Operation
* Size 1.00 x 0.385 inches
* Point to Point Radio
* Communications
* Satellite Communication Uplink Un

CMPA5585030F-CREE.pdf