CMPA5585030F Datasheet - CREE

CMPA5585030F Power Amplifier

CMPA5585030F 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is avail.

CMPA5585030F Features

* Applications

* 25 dB Small Signal Gain

* 30 W Typical PSAT

* Operation up to 28 V

* High Breakdown Voltage

* High Temperature Operation

* Size 1.00 x 0.385 inches

* Point to Point Radio

* Communications

* Satellite Communicat

CMPA5585030F-CREE.pdf