CMPA5259050F Datasheet - CREE

CMPA5259050F GaN MMIC

CMPA5259050F 50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a 0.5 inch square ceramic/metal flange package. PacPkNa:geCMTyPpAe5:245490025109F Typical Performance Over 5.2-5.9 GHz (TC = 25˚C) of D.

CMPA5259050F Features

* 30 dB Small Signal Gain

* 50% Efficiency at PSAT

* Operation up to 28 V

* High Breakdown Voltage

* 0.5 inch-square package Applications

* AESA Radar

* Defense Radar

* Fire Control Radar

* Naval, Marine, Ground Protection Rada

CMPA5259050F-CREE.pdf