XNS25N120T Datasheet - Xiner

XNS25N120T, 1200V 25A IGBT

Data Sheet XNS25N120T 1200V/25A IGBT * /PRODUCT .

Features

* + Advanced Trench+FS IGBT technology
* Low Collector-Emitter Saturation voltage
* With anti-parallel fast recovery diode
* TJ = 175 °C Maximum junction temperature: TJ = 175 °C

Applications

* Motor control 2 1 3 1.Gate/ 2.Collector/ 3.Emitter/ /Key Performance and Package Parameters Type XNS25N120T VCE 1200V IC 25A VCEsat, Tvj=25℃ 1.8V Shenzhen invsemi technology co,ltd IGBT_IPM_PIM_HVIC_ (invsemi. com) Tvjmax 175℃ Package TO-247-3L 、 Ratings&Thermal Resistance XNS25N12

XNS25N120T-Xiner.pdf