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VSMT110P03DA1 -30V P-Channel Enhancement Mode MOSFET

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Description

VSMT110P03DA1 -30V P-Channel Enhancement Mode MOSFET General .
The VSMT110P03DA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
VSMT110P03DA1
Manufacturer
Xirun
File Size
2.08 MB
Datasheet
VSMT110P03DA1-Xirun.pdf
Description
-30V P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Technology Innovation Future Rev.2023 Page 2 Typical Characteristics VSMT110P03DA1 -30V P-Channel Enhancement Mode MOSFET Figure1: Output Characteristics Figure Figure2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current

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-30V P-Channel Enhancement Mode MOSFET Xirun
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