VSMT056P03VA1 Datasheet - Xirun

VSMT056P03VA1 - -30V P-Channel Enhancement Mode MOSFET

The VSMT056P03VA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Application Lithium battery protection Wireless impact Mobile ph

Datasheet Details

VSMT056P03VA1

Xirun

2.30 MB

-30v p-channel enhancement mode mosfet.

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