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VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET

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Description

VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET General .
The VSMT260P04NA1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
VSMT260P04NA1
Manufacturer
Xirun
File Size
2.58 MB
Datasheet
VSMT260P04NA1-Xirun.pdf
Description
-40V P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF A A V Technology Innovation Future Rev.2023 Page 2 Typical Characteristics VSMT260P04NA1 -40V P-Channel Enhancement Mode MOSFET Technology Innovation Future Rev.2023 Page 3 VSMT260P04NA1 -40V P-Channel En

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-40V P-Channel Enhancement Mode MOSFET Xirun
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