XP10NA8R4R N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10NA8R4R Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Charact.
XP10NA8R4 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10NA8R4R
Manufacturer: YAGEO
File Size: 191.92 KB
Datasheet: XP10NA8R4R-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-262 package is widely preferred for commercialindustrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID 100V 8.4mΩ 66A G D S TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

XP10NA8R4R Distributors

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XP10NA8R4R N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP10NA8R4R-like datasheet