XP2N030EN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2N030EN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance .
XP2N030E series are innovated design and silicon process G technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP2N030EN
Manufacturer: YAGEO
File Size: 192.99 KB
Datasheet: XP2N030EN-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 20V 35mΩ 5.3A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Vol

XP2N030EN Distributors

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XP2N030EN N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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