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XP2N1K2EN1 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Datasheet Details

Part number XP2N1K2EN1
Manufacturer YAGEO
File Size 211.56 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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XP2N1K2EN1 Product details

Description

2 1 : Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power 3 applications.SOT-723(N1) 1 The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Par

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