XP2N1K2EN1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2N1K2EN1 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.2V Low Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Perfo.
2 1 : Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : So.

📥 Download Datasheet

XP2N1K2EN1 Datasheet Preview — Preview of XP2N1K2EN1 PDF

Datasheet Specifications

Part number: XP2N1K2EN1
Manufacturer: YAGEO
File Size: 211.56 KB
Datasheet: XP2N1K2EN1-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* SOT-723(N1) 1 The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ IDM IS@TA=25℃ ISM PD@TA=25℃ TSTG TJ Drain-Source Vo

XP2N1K2EN1 Distributors

📁 Related Datasheet

XP2 XP2-17 XP2-30 XP2-40 XP2-5 XP2-8

📌 All Tags

XP2N1K2EN1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP2N1K2EN1-like datasheet