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XP2N1K2EN1 Datasheet - YAGEO

XP2N1K2EN1 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2 1 : Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power 3 applications.

SOT-7

XP2N1K2EN1-YAGEO.pdf

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Datasheet Details

Part number:

XP2N1K2EN1

Manufacturer:

YAGEO

File Size:

211.56 KB

Description:

N-channel enhancement mode power mosfet.

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