XP2N1K2EN1 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2 1 : Gate XP2N1K2E series are innovated design and silicon process 2 : Drain technology to achieve the lowest possible on-resistance and 3 : Source fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power 3 applications.
SOT-7
