XP3A010AMT DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3A010AMT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compli.
XP3A010A series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

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Datasheet Specifications

Part number: XP3A010AMT
Manufacturer: YAGEO
File Size: 666.25 KB
Datasheet: XP3A010AMT-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* S1 G1 S2 G2 D1 D1 D2 D2 S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings . Symbol Parameter VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Curren

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XP3A010AMT DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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