XP30T10GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP30T10GH Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Character.
XP30T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP30T10GH
Manufacturer: YAGEO
File Size: 173.83 KB
Datasheet: XP30T10GH-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 100V 55mΩ 19A G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless o

XP30T10GH Distributors

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XP30T10GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP30T10GH-like datasheet