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XP30T10GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP30T10GM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic.
XP30T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast G switching performance.

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Datasheet Specifications

Part number
XP30T10GM
Manufacturer
YAGEO
File Size
205.14 KB
Datasheet
XP30T10GM-YAGEO.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 100V 55mΩ 4.5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Un

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