XP4957GM DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP4957GM Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual P MOSFET Package ▼ R.
XP4957 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP4957GM
Manufacturer: YAGEO
File Size: 206.33 KB
Datasheet: XP4957GM-YAGEO.pdf
Description: DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G1 The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 -30V 24mΩ -7.7A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

XP4957GM Distributors

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XP4957GM DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP4957GM-like datasheet