Datasheet4U Logo Datasheet4U.com

XP5322GM Datasheet - YAGEO

XP5322GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP5322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an G1 extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A.

XP5322GM-YAGEO.pdf

Preview of XP5322GM PDF
XP5322GM Datasheet Preview Page 2 XP5322GM Datasheet Preview Page 3

Datasheet Details

Part number:

XP5322GM

Manufacturer:

YAGEO

File Size:

241.69 KB

Description:

Dual n-channel enhancement mode power mosfet.

XP5322GM Distributor

📁 Related Datasheet

XP50AN1K0I N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50AN1K5I N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50AN1K5P N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50AN270I N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50AN270IN N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50AN500I N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50AN680I N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP50SL290DH N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

TAGS

XP5322GM XP5322GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO