Datasheet Details
| Part number | XP5322GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 241.69 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
|
| Part number | XP5322GM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 241.69 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
|
XP5322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an G1 extreme efficient device for use in a wide range of power applications.BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.Absolute
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