XP5322GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP5322GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteri.
XP5322 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP5322GM
Manufacturer: YAGEO
File Size: 241.69 KB
Datasheet: XP5322GM-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID D1 G2 S1 100V 250mΩ 1.9A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Sy

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XP5322GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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