XP5N2K2EN1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP5N2K2EN1 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 0.9V Very Low Gate Drive ▼ Lower Gate Charge ▼ Fast Switching .
XP5N2K2E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP5N2K2EN1
Manufacturer: YAGEO
File Size: 210.86 KB
Datasheet: XP5N2K2EN1-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application. 2 SOT-723(N1) 1 : Gate 2 : Drain 3 : Source 3 1 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ IDM IS@TA=25℃ ISM P

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XP5N2K2EN1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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