XP60AN650IN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60AN650IN Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characteris.
XP60AN650 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60AN650IN
Manufacturer: YAGEO
File Size: 197.88 KB
Datasheet: XP60AN650IN-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 600V 0.65Ω 11A G DS TO-220CFM-NL(IN) Absolu

XP60AN650IN Distributors

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XP60AN650IN N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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